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Vishay Siliconix VQ1001P-E3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | 14-DIP |
| Base Product Number | VQ1001 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 25 |
Mosfet Array 30V 830mA 2W Through Hole 14-DIP
