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Rohm Semiconductor R6507ENJTL
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| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 665mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LPTS |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Base Product Number | R6507 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount LPTS
