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Renesas Electronics America Inc UPD48576218F1-E24-DW1-E2-A
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LLDRAM2 |
| Memory Size | 576Mbit |
| Memory Organization | 32M x 18 |
| Memory Interface | HSTL |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TBGA |
| Supplier Device Package | 144-TFBGA (11x18.5) |
| Base Product Number | UPD48576218 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | OBSOLETE |
| Other Names | 559-UPD48576218F1-E24-DW1-E2-A |
| Standard Package | 1 |
LLDRAM2 Memory IC 576Mbit HSTL 400 MHz 20 ns 144-TFBGA (11x18.5)
