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Renesas Electronics America Inc RMLV0816BGSD-4S2#AA1
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8, 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 52-TFSOP (0.350", 8.89mm Width) |
| Supplier Device Package | 52-TSOP II |
| Base Product Number | RMLV0816 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | -1161-RMLV0816BGSD-4S2#AA1 |
| Standard Package | 230 |
SRAM Memory IC 8Mbit Parallel 45 ns 52-TSOP II
