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Renesas Electronics America Inc RJK03M8DNS-00#J5
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| Parameters | |
|---|---|
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 5,000 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
N-Channel 30 V 30A (Ta) 20W (Tc) Surface Mount 8-HWSON (3.3x3.3)
