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Renesas Electronics America Inc 7006L35G
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 128Kbit |
| Memory Organization | 16K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 68-BPGA |
| Supplier Device Package | 68-PGA (29.46x29.46) |
| Base Product Number | 7006L35 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 3 |
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 35 ns 68-PGA (29.46x29.46)
