| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Box |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
50 V |
| Current - Continuous Drain (Id) @ 25°C |
100mA (Ta) |
| Rds On (Max) @ Id, Vgs |
20Ohm @ 10mA, 10V |
| Vgs(th) (Max) @ Id |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
15 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
200mW (Ta) |
| Operating Temperature |
125°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
3-SPA |
| Package / Case |
3-SIP |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
2,500 |
N-Channel 50 V 100mA (Ta) 200mW (Ta) Through Hole 3-SPA