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onsemi 2N6027RL1
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| Parameters | |
|---|---|
| Voltage | 40V |
| Power Dissipation (Max) | 300 mW |
| Voltage - Output | 11V |
| Voltage - Offset (Vt) | 1.6 V |
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Valley (Iv) | 50 µA |
| Current - Peak | 2 µA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Base Product Number | 2N6027 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.30.0080 |
| Standard Package | 2,000 |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
Programmable Unijunction Transistor (UJT) 40V 300 mW TO-226-3, TO-92-3 (TO-226AA) Formed Leads
