| Parameters |
| Mfr |
ISSI, Integrated Silicon Solution Inc |
| Series |
Automotive, AEC-Q100 |
| Package |
Bulk |
| Product Status |
Active |
| Memory Type |
Volatile |
| Memory Format |
DRAM |
| Technology |
SDRAM - Mobile LPDDR4X |
| Memory Size |
8Gbit |
| Memory Organization |
256M x 32 |
| Memory Interface |
LVSTL |
| Clock Frequency |
1.6 GHz |
| Write Cycle Time - Word, Page |
18ns |
| Access Time |
3.5 ns |
| Voltage - Supply |
1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature |
-40°C ~ 105°C (TC) |
| Mounting Type |
Surface Mount |
| Package / Case |
200-TFBGA |
| Supplier Device Package |
200-TFBGA (10x14.5) |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Other Names |
706-IS46LQ32256AL-062BLA2 |
| Standard Package |
136 |
SDRAM - Mobile LPDDR4X Memory IC 8Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)