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Infineon Technologies 5962F1120101QXA
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| Parameters | |
|---|---|
| ECCN | OBSOLETE |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory Size | 72Mbit |
| Memory Organization | 4M x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 165-BFCPGA |
| Supplier Device Package | 165-CCGA (21x25) |
| Base Product Number | 5962F1120101 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
SRAM - Synchronous, QDR II+ Memory IC 72Mbit Parallel 250 MHz 165-CCGA (21x25)
