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Cypress Semiconductor Corp CY7C1356CV25-166CKJ
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| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | NoBL™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.5 ns |
| Voltage - Supply | 2.375V ~ 2.625V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Base Product Number | CY7C1356 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | Vendor Undefined |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns
